发明名称 |
METHODS FOR CONTROLLING PLASMA CONSTITUENT FLUX AND DEPOSITION DURING SEMICONDUCTOR FABRICATION AND APPARATUS FOR IMPLEMENTING THE SAME |
摘要 |
A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time- dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process. |
申请公布号 |
WO2012036923(A3) |
申请公布日期 |
2012.05.31 |
申请号 |
WO2011US50379 |
申请日期 |
2011.09.02 |
申请人 |
LAM RESEARCH CORPORATION;DHINDSA, RAJINDER |
发明人 |
DHINDSA, RAJINDER |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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