发明名称 PULSED PLASMA TO AFFECT CONFORMAL PROCESSING
摘要 A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces, in another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.
申请公布号 WO2011130014(A3) 申请公布日期 2012.05.31
申请号 WO2011US30737 申请日期 2011.03.31
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;MAYNARD, HELEN;SINGH, VIKRAM;RADOVANOV, SVETLANA;PERSING, HAROLD 发明人 MAYNARD, HELEN;SINGH, VIKRAM;RADOVANOV, SVETLANA;PERSING, HAROLD
分类号 H01L21/265;H01L21/223;H01L21/306 主分类号 H01L21/265
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