发明名称 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
摘要 Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device may include a substrate provided with a transistor, an insulating layer disposed on the substrate, the insulating layer including a contact hole exposing a portion of the transistor, a spacer disposed on an inner sidewall of the contact hole, and a contact plug disposed in the contact hole. Here, a space defined by the spacer may increase in width from a bottom side thereof to a top side thereof.
申请公布号 US2012132970(A1) 申请公布日期 2012.05.31
申请号 US201113306112 申请日期 2011.11.29
申请人 PARK JONGCHUL;JEONG SANGSUP;KANG BYUNG-JIN;SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JONGCHUL;JEONG SANGSUP;KANG BYUNG-JIN
分类号 H01L23/48;H01L27/06;H01L29/78 主分类号 H01L23/48
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