发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME |
摘要 |
Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device may include a substrate provided with a transistor, an insulating layer disposed on the substrate, the insulating layer including a contact hole exposing a portion of the transistor, a spacer disposed on an inner sidewall of the contact hole, and a contact plug disposed in the contact hole. Here, a space defined by the spacer may increase in width from a bottom side thereof to a top side thereof. |
申请公布号 |
US2012132970(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113306112 |
申请日期 |
2011.11.29 |
申请人 |
PARK JONGCHUL;JEONG SANGSUP;KANG BYUNG-JIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JONGCHUL;JEONG SANGSUP;KANG BYUNG-JIN |
分类号 |
H01L23/48;H01L27/06;H01L29/78 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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