A die temperature sensor circuit (200) includes an amplifier (203) that has first and second stages of amplification and that has bipolar transistors (201 and 202) as an input differential pair. The bipolar transistors have different current densities. A difference between base-emitter voltages of the bipolar transistors is proportional to absolute temperature of the bipolar transistors. The bipolar transistors also provide amplification for the first stage of amplification. Multiple feedback loops maintain a same ratio between the current densities of the bipolar transistors over temperature by changing collector currents that bias the bipolar transistors. A feedback loop includes a second stage of amplification and such feedback loop cancels effect that base currents of the bipolar transistors have on an output signal of the die temperature sensor circuit.
申请公布号
US2012133422(A1)
申请公布日期
2012.05.31
申请号
US20100955598
申请日期
2010.11.29
申请人
PEREIRA DA SILVA, JR. EDEVALDO;COIMBRA RICARDO PUREZA;FREESCALE SEMICONDUCTOR, INC.
发明人
PEREIRA DA SILVA, JR. EDEVALDO;COIMBRA RICARDO PUREZA