THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要
<p>PURPOSE: A thin film transistor display plate and a manufacturing method thereof are provided to reduce resistance by selectively making a signal line thick. CONSTITUTION: A gate wire is located on a substrate. The wire includes a gate line(121) and a gate electrode(124). The gate line is horizontally extended. The gate electrode protrudes from the gate line. A data line(171) is located on the substrate and vertically extended. An interlayer insulating film is located on the gate wire and the data line. A semiconductor layer(154) is located on the interlayer insulating film. A drain electrode(175) is located on a source electrode(173) and a gate electrode is located on a spot opposite to the source electrode. The source electrode is located on the semiconductor layer. A protective film is located on the source electrode and the drain electrode. A pixel electrode(191) locates on the protective film.</p>
申请公布号
KR20120055261(A)
申请公布日期
2012.05.31
申请号
KR20100116896
申请日期
2010.11.23
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHANG, CHONG SUP;KHANG, YOON HO;KIM, HYUNG JUN;YU, SE HWAN;PARKK, SANG HO;KANG, SU HYOUNG;CHA, MYOUNG GEUN;SHIN, YOUNG KI;LEE, JI SEON