发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME |
摘要 |
A semiconductor device includes a semiconductor substrate having a first gate groove having first and second side walls facing to each other. A first gate insulating film covers the first and second side walls. A first gate electrode is disposed on the first gate insulating film and in a lower portion of the first gate groove. A first burying insulating film buries the first gate groove and covers the first gate electrode. A first diffusion region is adjacent to a first upper portion of the first gate insulating film. The first upper portion is positioned on an upper portion of the first side wall of the first gate groove. A second diffusion region is in contact with an upper portion of the second side wall of the first gate groove.
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申请公布号 |
US2012132971(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113307775 |
申请日期 |
2011.11.30 |
申请人 |
MIKASA NORIAKI;C/O ELPIDA MEMORY, INC. |
发明人 |
MIKASA NORIAKI |
分类号 |
H01L29/94;H01L29/78 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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