发明名称 |
SEMICONDUCTOR DEVICE COMPRISING A CAPACITOR AND AN ELECTRICAL CONNECTION VIA, AND FABRICATION METHOD |
摘要 |
A main blind hole is formed in a front face of a wafer having a rear face. A through capacitor is formed in the main blind hole including a conductive outer electrode, a dielectric intermediate layer, and a filling conductive material forming an inner electrode. Cylindrical portions of the outer electrode, the dielectric intermediate layer and the inner electrode have front ends situated in a plane of the front face of the wafer. A secondary rear hole is formed in the rear face of the wafer to reveal a bottom of the outer electrode. A rear electrical connection is made to contact the bottom of the outer electrode through the secondary rear hole. A through hole via filled with a conductive material is provided adjacent the through capacitor. An electrical connection is made on the rear face between the rear electrical connection and the through hole via. |
申请公布号 |
US2012133021(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113298823 |
申请日期 |
2011.11.17 |
申请人 |
JOBLOT SYLVAIN;FARCY ALEXY;CARPENTIER JEAN-FRANCOIS;BAR PIERRE;STMICROELECTRONICS (CROLLES 2) SAS;STMICROELECTRONICS S.A. |
发明人 |
JOBLOT SYLVAIN;FARCY ALEXY;CARPENTIER JEAN-FRANCOIS;BAR PIERRE |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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