发明名称 CHEMICAL MECHANICAL POLISHING SLURRY
摘要 <p>Disclosed is a chemical mechanical polishing slurry, comprising water, an abrasive, silver ions, sulfate ions, a peroxide, and a surfactant. The polishing slurry has a very high tungsten polishing rate, and significantly eliminates surface defects on a chip at the same time.</p>
申请公布号 WO2012068775(A1) 申请公布日期 2012.05.31
申请号 WO2011CN01766 申请日期 2011.10.24
申请人 ANJI MICROELECTRONICS (SHANGHAI) CO., LTD;WANG, CHEN;HE, HUAFENG 发明人 WANG, CHEN;HE, HUAFENG
分类号 C09G1/02 主分类号 C09G1/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利