| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of removing an electrification charge to a floating gate without adding another separate step. <P>SOLUTION: A manufacturing method of a semiconductor device comprises the steps of forming an electrode layer 22 including at least a floating gate 25 in one principal surface 11 of a semiconductor substrate 10, forming an interlayer insulating film 40 on the electrode layer 22, forming a via hole 42 which exposes the electrode layer 22 to the interlayer insulating film and a via hole 48 which exposes one principal surface of the semiconductor substrate, forming a wiring layer 60 which is electrically connected to the electrode layer 22 via the via hole 42 and to the semiconductor substrate 10 via the via hole 48, and forming wiring 62 connected only to at least the electrode layer 22 by patterning the wiring layer 60. <P>COPYRIGHT: (C)2012,JPO&INPIT |
