发明名称 Non-Volatile Memory Device And Read Method Thereof
摘要 In one embodiment, the method includes receiving a request to read data stored in a first memory cell associated with a first word line, and performing a first read operation on at least one memory cell associated with a second word line in response to the request. The second word line follows the first word line in a word line programming order, and the first read operation is performed over a first time period. The method further includes performing a second read operation on the first memory cell based on output from the first read operation. The second read operation is performed for a second time period, and the first time period is shorter than the second time period if output from performing the first read operation indicates the first memory cell is not coupled.
申请公布号 US2012137067(A1) 申请公布日期 2012.05.31
申请号 US201113094192 申请日期 2011.04.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JI-SANG;CHOI KIHWAN
分类号 G06F12/00;G11C16/26 主分类号 G06F12/00
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