发明名称 PLASMA TREATMENT APPARATUS, PLASMA TREATMENT METHOD, AND PLASMA TREATMENT BIAS VOLTAGE DETERMINATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of forming an appropriate ion energy distribution according to plasma treatment, as well as a plasma treatment method and a plasma treatment bias voltage determination method. <P>SOLUTION: The plasma treatment apparatus includes a vacuum chamber 11 having a placement stand 2 disposed inside the chamber and a DC pulse voltage generation unit 3 which applies a bias voltage, or a DC pulse voltage, to the placement stand 2. The DC pulse voltage generation unit 3 takes advantage of the fact that a peak in an ion energy distribution diagram consisting of ion energy values on a horizontal axis and ion frequencies on a vertical axis appears in correspondence to an amplitude value of the DC pulse voltage as it generates plural kinds of DC pulse voltages differing in the amplitude value from each other, whereby adjustment is made until an ion energy distribution pattern which forms an overlapping area in the distribution diagram in which peaks adjacent to each other overlap one on top of another becomes an appropriate pattern for plasma treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012104382(A) 申请公布日期 2012.05.31
申请号 JP20100252109 申请日期 2010.11.10
申请人 TOKYO ELECTRON LTD 发明人 SAWADA IKUO;MATSUKUMA MASAAKI
分类号 H05H1/46;C23C16/509;H01L21/205;H01L21/3065 主分类号 H05H1/46
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