| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an antenna arrangement for generating an rf electromagnetic field distribution at a plasma generating region in a process chamber of a plasma processing apparatus. <P>SOLUTION: The antenna arrangement includes an rf inductive antenna 210 for generating a first rf electromagnetic field extending into the plasma generating region, and passive antennas 220, 222. The passive antennas 220, 222 are inductively coupled to the rf inductive antenna 210 to generate a second rf electromagnetic field. The second rf electromagnetic field modifies the first rf electromagnetic field such that the rf electromagnetic field at the plasma generating region has altered radial and azimuthal distributions to provide a different degree of processing uniformity of the processing apparatus from that in the absence of the passive antennas 220, 222. The rf electromagnetic field distribution at the plasma generating region has a different azimuthal symmetry from that in the absence of the passive antennas 220, 222 to the rf inductive antenna 210. <P>COPYRIGHT: (C)2012,JPO&INPIT |
