| 摘要 |
The invention relates to a method for forming solder deposits (34) on raised contact metallization structures (24) of connection surfaces (23) of a substrate (19) designed in particular as a semiconductor component, wherein wetting surfaces (26) of the contact metallization structures (24) are brought in contact with a solder material layer (15) arranged on a solder material carrier (13), the substrate (19) is heated and the temperature of the solder material layer (15) is controlled at least during the duration of the contact, and subsequently the contact metallization structures (24) wetted with solder material (34) and the solder material layer (15) are separated, thus making it possible to prevent the formation of contact bridges between adjoining contact metallization structures (24) resulting from the surface tension of fused solder material when the wetting surfaces (26) of the contact metallization structures (24) and the solder material layer (15) are separated. |
