发明名称 |
DOUBLE PATTERNING WITH INLINE CRITICAL DIMENSION SLIMMING |
摘要 |
A method for double patterning a substrate (110, 310) is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD (124, 325) to a first reduced CD (126, 326) and a second CD slimming process to reduce the second CD (144, 326) to a second reduced CD (146, 335). |
申请公布号 |
WO2012071193(A2) |
申请公布日期 |
2012.05.31 |
申请号 |
WO2011US60386 |
申请日期 |
2011.11.11 |
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON AMERICA, INC.;DUNN, SHANNON, W.;HETZER, DAVE |
发明人 |
DUNN, SHANNON, W.;HETZER, DAVE |
分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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