发明名称 DOUBLE PATTERNING WITH INLINE CRITICAL DIMENSION SLIMMING
摘要 A method for double patterning a substrate (110, 310) is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD (124, 325) to a first reduced CD (126, 326) and a second CD slimming process to reduce the second CD (144, 326) to a second reduced CD (146, 335).
申请公布号 WO2012071193(A2) 申请公布日期 2012.05.31
申请号 WO2011US60386 申请日期 2011.11.11
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON AMERICA, INC.;DUNN, SHANNON, W.;HETZER, DAVE 发明人 DUNN, SHANNON, W.;HETZER, DAVE
分类号 H01L21/033 主分类号 H01L21/033
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