MEMORY CELL AND MEMORY DEVICE USING THE SAME

摘要

PURPOSE: A memory cell and a memory device using the same are provided to improve stability by preventing an electrode from being floated in a memory array area. CONSTITUTION: A ferroelectric transistor(110) is provided. A plurality of switching devices(111,112,113) are electrically combined with the ferroelectric transistor. A plurality of control lines transmit each control signal for controlling a plurality of switching device to each switching device. The plurality of switching devices are individually controlled based on each control signal to prevent each electrode of the ferroelectric transistor from being floated.