| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to prevent degradation of a profile using a sacrificial film which buries an open region while burying a hard mask pattern. CONSTITUTION: An insulating film is formed in on a substrate. A hard mask pattern(37) is formed on the insulating layer. An open region is formed by etching the insulating film using the hard mask pattern as an etch barrier. A sacrificial film(39) for burying the inner part of the open region is formed . The hard mask pattern is removed by performing a blanket etch process. The sacrificial film is removed.
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