发明名称 UPPER LAYER FILM-FORMING COMPOSITION AND METHOD FOR FORMING PHOTORESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide an upper layer film-forming composition capable of forming a film on a photoresist without causing no intermixing with a photoresist film and for maintaining a stable film without being eluted in a medium such as water during liquid immersion exposure and forming an upper layer film which is easily dissolved in an alkaline developer and a method for forming a photoresist pattern. <P>SOLUTION: In an upper layer-forming composition covering a photoresist film for forming a pattern by irradiation, the composition comprises a resin which is dissolved in a developer for developing the photoresist film is dissolved in a solvent and the solvent has a viscosity at 20&deg;C of less than 5.2&times;10<SP POS="POST">-3</SP>Pa s. In addition, the solvent does not cause intermixing between the photoresist film and the upper layer-forming composition and contains ethers and a hydrocarbon. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012103738(A) 申请公布日期 2012.05.31
申请号 JP20120033060 申请日期 2012.02.17
申请人 JSR CORP 发明人 NAKAMURA ATSUSHI;NAKAGAWA DAIKI;NAKAJIMA HIROMITSU;TSUJI TAKAYUKI;DOKOCHI HIROSHI;KONO HIROTA;NISHIMURA YUKIO
分类号 G03F7/11;H01L21/027 主分类号 G03F7/11
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