| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce leak current due to a short circuit of a word line and a bit line while preventing malfunction of a sense amplifier at access operation time by keeping a voltage level of the bit line at the voltage level of a precharge line, even when a floating period of the bit line becomes long. <P>SOLUTION: A semiconductor memory comprises; a memory block having multiple memory cells and a word line and a bit line connected to the memory cells; a precharge switch for connecting the bit line to a precharge line; a sense amplifier shared with the memory block; a timer periodically outputting an oscillation signal; and a switch control circuit temporarily turning on the precharge switch in response to an access operation and temporarily turning on the precharge switch in response to the oscillation signal while the access operation is not performed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
