| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device with high productivity. <P>SOLUTION: A silicon carbide semiconductor device comprises: p-type base layers 3 formed in surface portions in a drift layer 2 that is formed on a silicon carbide substrate 1 and is composed of silicon carbide; p-type contact layers 4 formed at predetermined depth positions in the base layers 3; n-type source layers 5 that are formed in surface portions in the base layers 3, are located in the same regions as the contact layers 4, and whose bottom surfaces contact the top surfaces of the contact layers; and source electrodes 9 that are formed in openings reaching to the contact layers 4 from a surface of the drift layer 2 and are electrically connected to the source layers 5 and the contact layers 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
