| 摘要 |
A method of manufacturing a semiconductor device, in which a second semiconductor layer of AlxGa1-x-yInyN (wherein x, y, and x+y satisfy x>0, y≧0, and x+y≦̸1, respectively) on a first semiconductor layer of GaN by hetero-epitaxial growth using a MOCVD method, the method including the steps of: (a) supplying N source gas and Ga source gas to form the first semiconductor layer; (b) supplying the N source gas without supplying the Ga source gas and Al source gas, after step (a); (c) supplying the N source gas and the Al source gas without supplying the Ga source gas, after step (b); and (d) supplying the N source gas, the Ga source gas and the Al source gas to form the second semiconductor layer, after step (c). |
