发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
A plasma processing apparatus is disclosed, which includes: a cathode module comprising a plurality of first channels which generate plasma; an anode having a chamber which contains the cathode and having at least one plasma outlet corresponding to the first channels; an electrode connected to a high-frequency electrical power and the cathode; and a plurality of second channels penetrating through the anode; wherein each first channel and each second channel are disposed alternately. A first gas is introduced into the first channels ionized under high frequency electrical power. In the first channels, the free electrons collided brings high density of plasma. The generated plasma is expelled through the plasma outlet to form a plasma diffusion region. A second gas is introduced into the plasma diffusion region through the second channels to take part in the reaction of plasma. |
申请公布号 |
US2012132366(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113157878 |
申请日期 |
2011.06.10 |
申请人 |
WU PEI-SHAN;TUNG FU-CHING;HO JUNG-CHEN;SHEN TEAN-MU;CHEN CHIA-MING;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
WU PEI-SHAN;TUNG FU-CHING;HO JUNG-CHEN;SHEN TEAN-MU;CHEN CHIA-MING |
分类号 |
C23F1/08;C23C16/455;C23C16/50 |
主分类号 |
C23F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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