发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma processing apparatus is disclosed, which includes: a cathode module comprising a plurality of first channels which generate plasma; an anode having a chamber which contains the cathode and having at least one plasma outlet corresponding to the first channels; an electrode connected to a high-frequency electrical power and the cathode; and a plurality of second channels penetrating through the anode; wherein each first channel and each second channel are disposed alternately. A first gas is introduced into the first channels ionized under high frequency electrical power. In the first channels, the free electrons collided brings high density of plasma. The generated plasma is expelled through the plasma outlet to form a plasma diffusion region. A second gas is introduced into the plasma diffusion region through the second channels to take part in the reaction of plasma.
申请公布号 US2012132366(A1) 申请公布日期 2012.05.31
申请号 US201113157878 申请日期 2011.06.10
申请人 WU PEI-SHAN;TUNG FU-CHING;HO JUNG-CHEN;SHEN TEAN-MU;CHEN CHIA-MING;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 WU PEI-SHAN;TUNG FU-CHING;HO JUNG-CHEN;SHEN TEAN-MU;CHEN CHIA-MING
分类号 C23F1/08;C23C16/455;C23C16/50 主分类号 C23F1/08
代理机构 代理人
主权项
地址