| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with suppressed parasitic operation and improved breakdown tolerance, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises a semiconductor layer, first conductive-type source regions, second conductive-type back-gate regions, first conductive-type drain regions, a gate insulating film, gate electrodes, a source electrode, and a drain electrode. The edges of the back-gate regions at the drain regions sides are located closer to the drain regions sides than to the edges of the source regions at the drain regions sides. <P>COPYRIGHT: (C)2012,JPO&INPIT |
