发明名称 |
METHOD AND APPARATUS FOR PRODUCING CRYSTAL SEMICONDUCTOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for producing a crystal semiconductor that reduce the facility cost by extending the life of a carbon heater or a carbon component in a furnace and produce a high-quality crystal semiconductor. <P>SOLUTION: In this method for producing the crystal semiconductor, semiconductor melt stored in a crucible arranged in a chamber is cooled from the bottom of the crucible to be solidified, and a crystal semiconductor is grown up. This method includes: a moisture removing process S10 of reducing the pressure in the chamber to 10<SP POS="POST">-4</SP>Pa or lower and removing the moisture in the chamber; a gas introducing process S20 of introducing inert gas into the chamber; a dissolving process S30 of heating and dissolving, with a heater, semiconductor raw material stored in the crucible to produce semiconductor melt; and a growing process S40 of cooling the crucible from the bottom to solidify the semiconductor melt and grow the crystal semiconductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012101972(A) |
申请公布日期 |
2012.05.31 |
申请号 |
JP20100251134 |
申请日期 |
2010.11.09 |
申请人 |
MITSUBISHI MATERIALS TECHNO CORP;UNION MATERIAL KK |
发明人 |
KAJIWARA JIRO;SAKURAGI SHIRO;HORIOKA YUKICHI |
分类号 |
C30B11/00;C01B33/02;C30B28/06;C30B29/06;C30B29/08;C30B29/42 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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