发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.
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申请公布号 |
US2012132903(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113297474 |
申请日期 |
2011.11.16 |
申请人 |
YAMAZAKI SHUNPEI;TAKAHASHI MASAHIRO;MARUYAMA TETSUNORI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKAHASHI MASAHIRO;MARUYAMA TETSUNORI |
分类号 |
H01L29/786;H01L21/34 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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