发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A contact plug 40 electrically connected to an impurity diffusion region between sidewalls of an adjacent pair of memory cells 1 is provided to pass through an interlayer dielectric film 18. A side wall of a contact hole 41 is covered with a sealing film 42 denser than the interlayer dielectric film 18. The contact plug 40 includes a barrier metal film 43 formed to cover a surface of the sealing film 42 and a bottom surface portion of the contact hole 41 and a metal plug 44 embedded in the contact hole 41 in a state surrounded by the barrier metal film 43.
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申请公布号 |
US2012132984(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201213364893 |
申请日期 |
2012.02.02 |
申请人 |
MIFUJI MICHIHIKO;NAKAO YUICHI;MIZUKOSHI TOSHIKAZU;TANAKA BUNGO;SHIBAGUCHI TAKU;MORIKAWA GENTARO;ROHM CO., LTD. |
发明人 |
MIFUJI MICHIHIKO;NAKAO YUICHI;MIZUKOSHI TOSHIKAZU;TANAKA BUNGO;SHIBAGUCHI TAKU;MORIKAWA GENTARO |
分类号 |
H01L29/792;H01L21/28;H01L21/76;H01L21/768;H01L23/532;H01L27/04;H01L29/78 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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