发明名称 |
SEMICONDUCTOR DEVICES HAVING DUAL TRENCH, METHODS OF FABRICATING THE SAME, AND ELECTRONIC SYSTEM HAVING THE SAME |
摘要 |
A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor device includes a semiconductor substrate having a cell region including a cell trench and a peripheral region including a peripheral trench. The cell trench is filled with a core insulating material layer, and the peripheral trench is filled with a padding insulating material layer conformably formed on an inner surface thereof and a core insulating material layer formed on an inner surface of the padding insulating material layer. The core insulating material layer has a greater fluidity than the padding insulating material layer.
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申请公布号 |
US2012132976(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201213368556 |
申请日期 |
2012.02.08 |
申请人 |
KIM DONG-WON;SIM JAE-HWANG;KIM KEON-SOO;LEE YOUNG-HO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG-WON;SIM JAE-HWANG;KIM KEON-SOO;LEE YOUNG-HO |
分类号 |
H01L29/788;H01L29/06 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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