发明名称 |
Resistive Switching Memory Device |
摘要 |
A resistive switching memory device is provided with first to third electrodes. The first electrode forms a Schottky barrier which can develop a rectifying property and resistance change characteristics at an interface between the first electrode and an oxide semiconductor. The third electrode is made of a material which provides an ohmic contact with the oxide semiconductor. A control voltage is applied between the first and second electrodes, and a driving voltage is applied between the first and third electrodes. |
申请公布号 |
US2012132883(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113323927 |
申请日期 |
2011.12.13 |
申请人 |
HIROSE SAKYO;MURATA MANUFACTURING, CO., LTD. |
发明人 |
HIROSE SAKYO |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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