| 摘要 |
According to one embodiment, a solid state imaging device includes a pixel cell including an FD node to convert a charge stored in a photodiode into a signal voltage and an amplifier transistor in which a gate is connected to the FD node, a source is connected to an output signal line, and a drain is connected to a pixel-power node, a voltage control portion including a first control transistor in which a gate sets to a first bias voltage, a source is connected to the output signal line, and a drain is connected to a first control portion-power node, a load circuit including a current source connected directly between one end of the output signal line and a source power supply node, and a control circuit which controls an operation to decide a reset voltage of the output signal line. The control circuit boosts the FD node. |
