| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing single crystal silicon that effectively blocks heat from a heater, a quartz crucible, silicon melt, or the like with a heat shield member, certainly cools a seed dipping part of the silicon melt and the crystal under growth, promotes the growth of single crystal silicon, and improves the productivity. <P>SOLUTION: This apparatus for producing the single crystal silicon includes, in a chamber, a bottomed cylindrical crucible for storing silicon melt and the heater arranged radially outside the crucible, and pulls up the seed dipped in the silicon melt and grows the single crystal silicon. The heat shield member 24 formed in a cylindrical shape so as to surround the seed is arranged above the crucible. The heat shield member 24 includes a first member 25 that is made of graphite and has a storage space 25A inside, and a second member 26 stored in the storage space 25A. The second member 26 has a reflection plate 27 where the surface pointing at the opposite side to the seed side is set as a glossy surface 27A. <P>COPYRIGHT: (C)2012,JPO&INPIT |
