| 摘要 |
According to one embodiment, a plurality of memory cells are provided on a semiconductor substrate. In each memory cell, a control gate electrode is provided on a charge accumulation layer with an inter-electrode insulation film interposed between the control gate electrode and the charge accumulation layer, an air gap is provided between the charge accumulation layers adjacent to each other in a word line direction, and an insulation film disposed below the inter-electrode insulation film is divided into an upper part and a lower part by the air gap.
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