METHODS FOR FORMING GROUP III-NITRIDE MATERIALS AND STRUCTURES FORMED BY SUCH METHODS
摘要
<p>Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III- nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.</p>
申请公布号
WO2012069530(A1)
申请公布日期
2012.05.31
申请号
WO2011EP70794
申请日期
2011.11.23
申请人
SOITEC;ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY;ARENA, CHANTAL;BERTRAM JR., RONALD THOMAS;LINDOW, ED;MAHAJAN, SUBHASH;MENG, FANYU
发明人
ARENA, CHANTAL;BERTRAM JR., RONALD THOMAS;LINDOW, ED;MAHAJAN, SUBHASH;MENG, FANYU