| 摘要 |
A Complementary Metal Oxide Semi-conductor (CMOS) TDI detector stage 100 comprising a photo-detector 101 and a pre-amplifier 103 containing an integration capacitor C1 and reset switch SW1 that proportionally converts the photo-charge to a voltage. The stage further comprises a summing capacitor 102 that is connected to the output of a prior stage and a correlated double sample (CDS) circuit 104 that stores the integrated signal voltages and passes them onto the next stage. Each CDS circuit comprises a plurality of switches SW2-SW6 and storage circuits (e.g. capacitors) C2-C4. The CDS signal voltages can be passed from one TDI stage to the next along a column for summing. The CDS signal voltages of the last TDI stages (Figure 2, 200) may be read out with a differential amplifier (Figure 2, 205,206). The CMOS TDI structure can be used for implementing X-ray scanning detector systems requiring large pixel sizes and signal processing circuitry that is physically separated from the photodiode array for X-ray shielding. |
