SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an active matrix type display device having pixel structure in which arrangement of a pixel electrode, gate wiring and source wiring which are formed in a pixel part is made suitable and also high aperture ratio is realized without increasing the number of masks and the number of processes.

SOLUTION: A semiconductor device comprises: a gate electrode and source wiring on an insulated surface; a first insulating layer on the gate electrode and the source wiring; a semiconductor layer on the first insulating layer; a second insulating layer on the semiconductor layer; gate wiring which is connected to the gate electrode on the second insulating layer; a connection electrode for connecting the source wiring and the semiconductor layer; and a pixel electrode which is connected to the semiconductor layer.

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