PHOTORESIST COMPOSITION AND METHOD FOR FORMING PHOTOLITHOGRAPHIC PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a photoresist composition useful in forming a photolithographic pattern by a negative tone development process, a method for forming a photolithographic pattern, and a substrate coated with the photoresist composition.

SOLUTION: The present invention relates to a photoresist composition and a photo lithography method allowing formation of a fine pattern by using a negative tone development process. The photoresist composition contains a copolymer formed from a monomer a part of which contains a certain acetal moiety. The preferred composition and method of the present invention provide reduction of thickness loss in photo lithography treatment and improvement of a pattern collapse margin. For the composition, the method and a coated substrate, special applicability has been found in manufacturing a semiconductor device.

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