| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of improving in-plane uniformity of plasma treatment by suppressing a temperature rise in the periphery of a substrate to be processed, thereby capable of uniform plasma treatment. <P>SOLUTION: The plasma processing device includes: a processing chamber capable of blocking the inside in an airtight manner; a processing gas supply mechanism for supplying processing gas to the internal chamber; an exhaust mechanism for exhausting gas from the internal chamber; a plasma generation mechanism for generating plasma of the processing gas; a mounting table disposed in the processing chamber and configured to mount the substrate to be processed on an identical plane to a focus ring disposed to surround the periphery of the substrate to be processed; a temperature regulation mechanism for regulating the temperature of the mounting table; and an electrostatic chuck disposed on the top face of the mounting table and having a suction electrode extending to the lower portion of the focus ring. <P>COPYRIGHT: (C)2012,JPO&INPIT |
