| 摘要 |
<p>The present invention relates to a method for forming, on the surface of one of the sides of a silicon substrate, a fibrous layer having a mean lattice pitch of no more than 2 µm, without requiring soaking. The invention also relates to devices, in particular photovoltaic cells, comprising a silicon substrate produced by means of such a method.</p> |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;GARANDET, JEAN-PAUL;BETTINELLI, ARMAND;DREVET, BEATRICE;PIHAN, ETIENNE;THONY, PHILIPPE |
发明人 |
GARANDET, JEAN-PAUL;BETTINELLI, ARMAND;DREVET, BEATRICE;PIHAN, ETIENNE;THONY, PHILIPPE |
