| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an area-efficient, high voltage, single polarity ESD protection device. <P>SOLUTION: An ESD protection device 300 includes: a p-type substrate 303; a first p-well 308-1 formed in the substrate and sized to contain n+ and p+ contact regions 310, 312 that are connected to a cathode terminal; a second, separate p-well 308-2 formed in the substrate and sized to contain only a p+ contact region 311 that is connected to an anode terminal; and an electrically floating isolation structure 304, 306, 307-2 formed in the substrate to surround and separate the first and second semiconductor regions. When a positive voltage exceeding a triggering voltage level is applied to the cathode and anode terminals, the ESD protection device triggers an inherent thyristor into a snapback mode to provide a low impedance path through the structure for discharging an ESD current. <P>COPYRIGHT: (C)2012,JPO&INPIT |
