| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which when upper layer wiring having wiring in top layer in specific is formed by a wiring forming method using the dual damascene method, a crown fence generated around a connection hole is easily removed to obtain high reliability. <P>SOLUTION: A third insulating film 17 and a second insulating film 16 having a density or dielectric constant smaller than that of the third insulating film 17 are etched using a mask layer 21 having openings formed on connection holes 19a, 19b as a mask to form a wiring groove 22, a projection part of an organic material 20 embedded in the connection hole 19b and a crown fence 23 mainly composed of a constitution material of the second insulating film 16 are generated simultaneously. On the other hand, at least the inside of the wiring groove 22 is plasma-treated in a process doubling as the mask layer 21 removing step, then processed with a process liquid which can dissolve the second insulating film 16 to selectively remove an altered crown fence 25 altered by the plasma-treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
