发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A normally-off transistor having an oxide semiconductor layer in a channel formation layer is provided. The transistor comprises: a first oxide semiconductor layer functioning as a channel formation region; a source electrode layer and a drain electrode layer which overlap with the first oxide semiconductor layer; a gate insulating layer which is provided over and in contact with the first oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a second oxide semiconductor layer which is provided over and in contact with the gate insulating layer and overlaps with the first oxide semiconductor layer; and a gate electrode layer provided over the second oxide semiconductor layer. A manufacturing method thereof is also disclosed.
|
申请公布号 |
US2012132902(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113295469 |
申请日期 |
2011.11.14 |
申请人 |
IMOTO YUKI;ASANO YUJI;MARUYAMA TETSUNORI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
IMOTO YUKI;ASANO YUJI;MARUYAMA TETSUNORI |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|