IR PHOTODETECTORS WITH HIGH DETECTIVITY AT LOW DRIVE VOLTAGE
摘要
An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector.
申请公布号
CA2818741(A1)
申请公布日期
2012.05.31
申请号
CA20112818741
申请日期
2011.10.13
申请人
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;NANOHOLDINGS, LLC
发明人
SO, FRANKY;KIM, DO YOUNG;SARASQUETA, GALILEO;PRADHAN, BHABENDRA K.
