| 摘要 |
<p>1,065,930. Semi-conductor devices. DANFOSS A.S. Dec. 16, 1965 [Dec. 22, 1964], No. 53473/65. Heading H1K. A switching device comprises a semi-conductor element 1 having a negative temperature coefficient of electrical resistance and a pair of electrodes 2, 3 in contact with opposite faces of the semi-conductor element 1, the thickness of the semi-conductor element being reduced in a selected region (e.g. by means of a recess 6) so that when a voltage is applied between the electrodes a channel 8 of high electrical conductivity is formed in the selected region.</p> |
