| 摘要 |
Provided is a semiconductor module (100) wherein a stress relaxing layer (45) is arranged between a ceramic substrate (20) whereupon a semiconductor elements (10) (IGBT (11), diode (12)) are mounted and a cooling device on the rear side of the ceramic substrate (20), and the ceramic substrate, the cooling device and the stress relaxing layer are integrally formed. Furthermore, the stress relaxing layer (45) is separated into a plurality of separated sections (45A, 45B, 45C, 45D) by two slits (461, 462). Furthermore, the slits (461, 462) are positioned between the semiconductor elements when viewed from the thickness direction of the stress relaxing layer (45) and not in a projection region of the semiconductor element. |
