PHOTOVOLTAIC CELL HAVING A HIGH CONVERSION EFFICIENCY

摘要

An embodiment of a monolithic photovoltaic cell is provided. The photovoltaic cell comprises at least one junction; said at least one junction includes a base formed by an epitaxial doped semiconductor material of a first conductivity type and an emitter formed by a doped semiconductor material of a second conductivity type opposed to the first. Said emitter is stacked on the base according to a first direction, and the base of at least one of said at least one junction has a decreasing dopant concentration gradient along said first direction. Said base comprises a first portion far from the emitter, a second portion proximate to the emitter, and a third portion between the first portion and the second portion. In the first portion, said decreasing dopant concentration gradient has a slope whose average value ranges from approximately −9*1017 cm−3/μm to −4*1017 cm−3/μm. In the second portion, said decreasing dopant concentration gradient has a slope whose average value ranges from approximately −3*1017 cm−3/μm to −9*1016 cm−3/μm. In the third portion, said decreasing dopant concentration gradient has a slope whose average value ranges approximately from −2*1017 cm−3/μm to −5*1016 cm−3/μm.