| 摘要 |
The present invention relates to a method for bonding lead frames for a semiconductor device; and more specifically to a method for bonding lead frames for a semiconductor device intended to facilitate bonding of lead frames made of the same kind of material as welding rods, through a primary welding process for preheating and for removing impurities, by supplying an optimal welding current during welding of the ends of lead frames that are supplied consecutively in the case where the welding rods are made of the same kind of material as a base material of the lead frame, and then bonding the lead frames through a secondary welding process. Using a lead frame bonding apparatus equipped with a cutting unit for cutting the end of a lead frame and a welding unit for inter-welding the ends of lead frames that are cut by the cutting unit using a welding rod made of the same kind of material as the lead frame, lead frames for a semiconductor device are bonded by the following method of the present invention, which comprises the steps of: aligning an end of the lead frame and an end of another lead frame at the welding unit; contacting the welding rod with the ends of the aligned lead frames, followed by the primary supply of a welding current; subjecting a welded region of the lead frames, to which the welding current has been supplied, to a primary pressurization for a certain period of time; collecting, by using a sensor, information on a bonding state of the primarily pressurized welding region; performing the secondary supply of a welding current to the welded region that has been primarily pressurized; and subjecting the welded region of the lead frames, to which the welding current has been supplied secondarily, to a secondary pressurization for a certain period of time.
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