| 摘要 |
PURPOSE: A high voltage generating device is provided to improve integration of a semiconductor device by decreasing the number of pump circuits. CONSTITUTION: A first pump circuit(101) adds a voltage level of a first control signal to an input voltage and outputs an added result as a first step-up voltage. A first level shift circuit(105) boosts a voltage level of a first control signal corresponding to a level of the first step-up voltage and outputs the boosted result as a second control signal. A second pump circuit(102) adds a voltage level of a second control signal to the first step-up voltage and outputs the added result as a second step-up voltage. |
