| 摘要 |
<p>A device having a self-aligned body on a first side of a gate is disclosed. The self-aligned body helps to achieve very low channel length for low Rdson. The self-aligned body isisolated, enabling to bias the body at different bias potentials. The device may be configuredinto a finger architecture having a plurality of transistors with commonly coupled, sources,commonly coupled gates, and commonly coupled drains to achieve high drive current outputs.Fig.1a</p> |
