Verfahren und Vorrichtung zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung aus der Gasphase

摘要

In an apparatus for depositing semi-conductor materials and/or doping materials on to monocrystalline semi-conductor wafers by heating them in a flowing gas bearing the coating material, the support for the wafers consists of an elongated vertical member 10 of parallel integrally-joined plates disposed horizontally, on which the wafers 14 rest. The plates are formed by cutting slots 0.5 mm. wide or wider in a rod, either on alternate sides (Fig. 2) or all on the same side (Fig. 4), when the slots may be inclined inwards. The support members may be of silicon, graphite, or tantalum and may act as electrical conductor resistances, or heating may be effected by an induction coil 23, which moves up the support bearing the series of wafers 21. The deposited semi-conducting or doping material has the same lattice structure as the substrate, and the grid constants do not differ more than 5%. The deposited material and substrate may be the same, e.g. Ge on Ge, Si on Si, or the following combinations: Ge on Si, gallium arsenide on Ge, aluminium arsenide on Ge or Si, gallium arsenide on aluminium arsenide or vice versa, aluminium phosphide on Si, gallium phosphide on Si, and indium phosphide on germanium. For example, SiCl4 or SiHCl3 is deposited using hydrogen as carrier gas, and gradually admixing a Ge compound and reducing the Si compound. Other semi-conductor arrangements are made by adding BCl3 and PCl3 as dopes producing p- and n-layers. The coatings may be applied to both faces of the wafer. The carrier slots when of a high resistance material, e.g. Si, may be provided with a disc of lower resistance material, e.g. Mo, W or graphite, on which the wafer rests, and the induction coil 23 may pass up the column repeatedly to form multi-layers. Specifications 853,729, 861,135 and 914,042 are referred to.ALSO: In an apparatus for depositing semi-conductor materials or doping materials on to monocrystalline semi - conductor wafers by heating them in a flowing gas bearing the coating material, the support for the wafers consists of an elongated vertical member 10 of integrally - joined plates disposed horizontally, on which wafers 14 rest. The plates are formed by cutting slots in a rod either on alternate sides (Fig. 2) or all on one side (Fig. 4). The rod may be of silicon, graphite, or tantalum, and may act as electrical conductor resistance, or heat may be applied by an induction coil 23 (Fig. 4) which moves up the column of wafers, respectively if multi-coatings are required. The deposited material and substrate may be the same, e.g. Ge on Ge or Si on Si, or the following combinations; Ge on Si, gallium arsenide on Ge or aluminium arsenide or vice versa, aluminium arsenide on Si, aluminium phosphide on Si, gallium phosphide on Si, and indium phosphide on Ge. For example, SiCl4 or SiHCl3 is deposited using hydrogenous carrier gas, and gradually admixing a Ge compound, while reducing the Si compounds. BCl3 or PCl3 may be added as dopes. The coatings may be applied to both sides of the wafers. Specifications 853,729, 861,135 and 914,042 are referred to.