METHOD OF WAFER BONDING

摘要

PURPOSE: A wafer bonding method is provided to improve quality of product by pressurizing two semiconductor substrates and forming a bonded substrate and transferring heat from the center of the bonded substrate to edge. CONSTITUTION: A first substrate(10) including a first side and a second side(10b) facing to the first side is provided. An insulating film is formed on the first side and the second side. The insulating film is an oxide film or a nitride film. A second substrate(20) including a third side and a fourth(20b) facing to the third side is provided. Bonding surface of two wafers are activated by using plasma. An initial bonding process is executed by perpendicularly pressurizing the bonding surface of the two wafers. The two wafers are bonded by selectively heating the center of the initially bonded wafers.