Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector
摘要
The invention relates to a radiation detector (1), a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector (1) has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10 - 200 nm and/or for charged particles. The radiation detector (1) has a silicon substrate (3), a dopant layer (5), a first electrode (7) and a second electrode (9). The silicon substrate (3) is provided in a surface area (10) at a first surface side with doping profile of a certain conduction type. The dopant layer (5) is provided on the first surface side of the silicon substrate (3). The dopant layer has a first layer (5a) of dopant material and a second layer (5b). The second layer (5b) is a diffusion layer which is in contact with the surface area (10) at the first surface side of the silicon substrate. The first electrode (7) is connected to dopant layer (5). The second electrode (9) is connected to the silicon substrate (3).
申请公布号
EP2458650(A2)
申请公布日期
2012.05.30
申请号
EP20120156340
申请日期
2008.06.18
申请人
ASML NETHERLANDS BV
发明人
NIHTIANOV, STOYAN;GOMMEREN, GREGORY;POT, MARTIJN;SCHOLTES, THOMAS, LUDOVICUS, MARIA;VAN DER SIJS, ARIE;MOEST, BEARRACH;KEMPER, NICOLAAS;HAAST, MARC;BAAS, GERARDUS;NANVER, LIS;SARUBBI, FRANCESCO;SCHUWER, ANTONIUS