ORGANIC THINFILM TRANSISTOR AND METHOD OF MANUFACTURING THEREOF

摘要

PURPOSE: An organic thin film transistor and a manufacturing method thereof are provided to improve charge mobility by effectively preventing an organic semiconductor layer to be exposed to atmosphere through a double passivation layer structure. CONSTITUTION: An organic semiconductor layer(400) is formed on the upper side of a bottom substrate. A first passivation layer(600) is formed on the upper side of the organic semiconductor layer and covers the organic semiconductor layer. A second passivation layer(700) is formed on the upper side of the first passivation layer and covers the first passivation layer. The first passivation layer is composed of molecules having hydrophilic properties. The second passivation layer is composed of molecule having hydro phobic properties. A gate insulating film insulates a gate electrode from the organic semiconductor layer.